11 results
Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors
-
- Journal:
- MRS Advances / Volume 1 / Issue 4 / 2016
- Published online by Cambridge University Press:
- 26 January 2016, pp. 275-280
- Print publication:
- 2016
-
- Article
- Export citation
Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1195 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1195-B04-03
- Print publication:
- 2009
-
- Article
- Export citation
Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1155 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1155-C10-06
- Print publication:
- 2009
-
- Article
- Export citation
Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1073 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1073-H06-04
- Print publication:
- 2008
-
- Article
- Export citation
A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 917 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0917-E04-05
- Print publication:
- 2006
-
- Article
- Export citation
Impact of Heavy Boron Doping and Nickel Germanosilicide Contacts on Biaxial Compressive Strain in Pseudomorphic Silicon-Germanium Alloys on Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 913 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0913-D02-10
- Print publication:
- 2006
-
- Article
- Export citation
Issues in High-ĸ Gate Stack Interfaces
-
- Journal:
- MRS Bulletin / Volume 27 / Issue 3 / March 2002
- Published online by Cambridge University Press:
- 31 January 2011, pp. 212-216
- Print publication:
- March 2002
-
- Article
- Export citation
The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 716 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, B8.6
- Print publication:
- 2002
-
- Article
- Export citation
Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K3.1
- Print publication:
- 2001
-
- Article
- Export citation
Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 49
- Print publication:
- 1993
-
- Article
- Export citation
Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 298 / 1993
- Published online by Cambridge University Press:
- 25 February 2011, 157
- Print publication:
- 1993
-
- Article
- Export citation